technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn medium power silicon transistor qualified per mil-prf-19500/349 t4-lds-0016 rev. 1 (072040) page 1 of 2 devices levels 2n3506 2n3507 jan 2n3506a 2N3507A jantx 2n3506l 2n3507l jantxv 2n3506al 2N3507Al absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol 2n3506 2n3507 unit collector-emitter voltage v ceo 40 50 vdc collector-base voltage v cbo 60 80 vdc emitter-base voltage v ebo 5.0 vdc collector current i c 3.0 adc total power dissipation @ t a = 25c (1) @ t c = 25c (2) p t 1.0 5.0 w operating & storage temperature range t op , t stg -65 to +200 c note: 1) derate linearly 5.71 mw/c for t a > +25c 2) derate linearly 55.5 mw/c for t c > +25c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics collector-emitter breakdown voltage i c = 10madc 2n3506 2n3507 v (br)ceo 40 50 vdc collector-emitter cutoff current v ce = 40vdc v ce = 60vdc 2n3506 2n3507 i cex 1.0 1.0 adc collector-base breakdown voltage i c = 100adc v (br)cbo 60 80 vdc emitter-base breakdown voltage i e = 10adc v (br)ebo 5 vdc on characteristics (3) forward-current transfer ratio i c = 500madc, v ce = 1vdc 2n3506 2n3507 h fe 50 35 250 175 forward-current transfer ratio i c = 1.5adc, v ce = 2vdc 2n3506 2n3507 h fe 40 30 200 150 forward-current transfer ratio i c = 2.5adc, v ce = 3vdc 2n3506 2n3507 h fe 30 25 to-5 (l-versions) to-39 (to-205-ad)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn medium power silicon transistor qualified per mil-prf-19500/349 t4-lds-0016 rev. 1 (072040) page 2 of 2 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit on characteristics (3) forward-current transfer ratio i c = 3.0adc, v ce = 5vdc 2n3506 2n3507 h fe 25 20 forward-current transfer ratio i c = 500madc, v ce = 1.0vdc 2n3506 2n3507 h fe 25 17 forward-current transfer ratio i c = 500madc, v ce = 2vdc 2n3506a 2N3507A h fe 25 17 collector-emitter saturation voltage i c = 500madc, i b = 50madc v ce(sat) 0.5 vdc collector-emitter saturation voltage i c = 1.5adc, i b = 150madc v ce(sat) 1.0 vdc collector-emitter saturation voltage i c = 2.5adc, i b = 250madc v ce(sat) 1.5 vdc base-emitter saturation voltage i c = 500madc, i b = 50madc v be(sat) 1.0 vdc base-emitter saturation voltage i c = 1.5adc, i b = 150madc v be(sat) 0.8 1.3 vdc base-emitter saturation voltage i c = 2.5adc, i b = 250madc v be(sat) 2.0 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small-signal short-circuit forward current transfer ratio i c = 100madc, v ce = 5vdc, f = 20mhz |h fe | 3.0 15 output capacitance v cb = 10vdc, i e = 0, 100khz f 1.0mhz c obo 40 pf input capacitance v eb = 3.0vdc, i c = 0, 100khz f 1.0mhz c ibo 300 pf switching characteristics (4) parameters / test conditions symbol min. max. unit delay time i c = 1.5adc, i b1 = 150madc t d 15 ns rinse time i c = 1.5adc, i b1 = 150madc t r 30 ns storage time i c = 1.5adc, i b1 = i b2 = 150madc t s 55 ns fall time i c = 1.5adc, i b1 = i b2 = 150madc t f 35 ns (3) pulse test: pulse width = 300s, duty cycle 2.0%. (4) consult mil-prf-19500/349 for additional infornation.
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